R6006ANDTL
MOSFET N-CH 600V 6A CPTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6006ANDTL is an N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc), with a maximum power dissipation of 40W (Tc). The Rds(on) is specified at a maximum of 1.2 Ohms at 3A and 10V gate-source voltage. Key characteristics include a typical gate charge (Qg) of 15 nC at 10V and an input capacitance (Ciss) of 460 pF at 25V. The R6006ANDTL utilizes Metal Oxide technology and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, delivered on tape and reel. This component is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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