R6004KNX
MOSFET N-CH 600V 4A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6004KNX is a 600V N-Channel MOSFET designed for high-voltage applications. This through-hole component, packaged in a TO-220FM, offers a continuous drain current of 4A (Tc) with a maximum power dissipation of 40W (Tc). Key electrical parameters include a Vds of 600V, a Vgs(th) of 5V (at 1mA), and a maximum Rds(On) of 980mOhm at 1.5A and 10V. The gate charge (Qg) is rated at 10.2 nC (at 10V), and input capacitance (Ciss) is a maximum of 280 pF (at 25V). Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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