R6004CNDTL
MOSFET N-CH 600V 4A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R6004CNDTL is an N-Channel power MOSFET designed for high-voltage applications. It features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C. The device offers a maximum On-Resistance (Rds On) of 1.8 Ohms at 2A and 10V. With a maximum power dissipation of 40W (Tc), this MOSFET is suitable for demanding power management tasks. Key parameters include a Gate Charge (Qg) of 11 nC (max) and Input Capacitance (Ciss) of 280 pF (max). The R6004CNDTL is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (CPT3) surface mount package and operates at junction temperatures up to 150°C. This component finds application in areas such as power supplies, lighting, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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