R5207ANDTL
MOSFET N-CH 525V 7A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R5207ANDTL is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 525V and a continuous Drain Current (Id) of 7A at 25°C (Ta). With a maximum Power Dissipation of 40W (Tc), it is suitable for power management in industrial and automotive sectors. The R5207ANDTL offers a low on-resistance of 1 Ohm maximum at 3.5A and 10V, with a Gate Charge (Qg) of 13 nC at 10V. It utilizes surface mount technology, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 format, supplied on tape and reel. Maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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