R5021ANX
MOSFET N-CH 500V 21A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R5021ANX is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vds) of 500 V and a continuous drain current (Id) of 21 A at 25°C. With a maximum power dissipation of 50 W (Tc) and a low on-resistance (Rds On) of 210 mOhm at 10.5 A and 10 V, it offers efficient power handling. The R5021ANX is housed in a TO-220FM package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 64 nC at 10 V and input capacitance (Ciss) of 2300 pF at 25 V. This device operates at junction temperatures up to 150°C. It finds application in industrial power supplies and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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