R5016ANX
MOSFET N-CH 500V 16A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor R5016ANX is a high-performance N-Channel MOSFET designed for demanding power applications. This device features a robust 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C, with a maximum power dissipation of 77W (Tc). The R5016ANX offers a typical Rds On of 270mOhm at 8A and 10V, optimized for efficient switching. It boasts a low gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 1800 pF @ 25V. Packaged in a TO-220FM (TO-220-3 Full Pack) configuration with through-hole mounting, this MOSFET is suitable for use in industrial power supplies, motor control, and lighting applications. The operating junction temperature (TJ) reaches up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
