R5011FNX
MOSFET N-CH 500V 11A TO-220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R5011FNX is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The Rds On is specified at a maximum of 520mOhm when driven at 5.5A and 10V gate-source voltage. With a maximum power dissipation of 59W, it is suitable for high-power switching applications. The device utilizes Metal Oxide technology and is housed in a TO-220FM package, offering through-hole mounting. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 950 pF at 25V. This MOSFET is commonly employed in power supply units, industrial automation, and motor control systems. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
| Qualification | - |
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