R5011ANX
MOSFET N-CH 500V 11A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R5011ANX is an N-Channel MOSFET designed for high-voltage power switching applications. This component features a drain-to-source voltage (Vdss) of 500V and offers a continuous drain current (Id) of 11A at 25°C (Ta). The R5011ANX exhibits a maximum on-resistance (Rds On) of 500mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC maximum and an input capacitance (Ciss) of 1000 pF maximum. The device is housed in a TO-220FM package, suitable for through-hole mounting, and supports a maximum junction temperature of 150°C. Power dissipation is rated at 50W (Tc). This MOSFET is utilized in power supplies, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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