R5009ANX
MOSFET N-CH 500V 9A TO220Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number R5009ANX, offers a 500V drain-source breakdown voltage and a continuous drain current capability of 9A at 25°C (Tc). This TO-220FM packaged device features a maximum on-resistance of 720mOhm at 4.5A and 10V Vgs. With a gate charge of 21 nC at 10V and input capacitance of 650 pF at 25V, this MOSFET is suitable for applications requiring efficient switching. The device can dissipate up to 50W (Tc) and operates at junction temperatures up to 150°C. Its through-hole mounting facilitates integration into various power supply designs, motor control systems, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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