R5005CNX
MOSFET N-CH 500V 5A TO220Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R5005CNX is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 5 A at 25°C. With a maximum power dissipation of 40 W (Tc), it offers robust performance in demanding environments. The R5005CNX has a low on-resistance (Rds On) of 1.6 Ohm at 2.5 A and 10 V, with a gate charge (Qg) of 10.8 nC at 10 V and input capacitance (Ciss) of 320 pF at 25 V. It is packaged in a TO-220FM through-hole configuration and operates at temperatures up to 150°C (TJ). This device is suitable for use in power supply circuits and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 23 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 25 V |
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