R4008ANDTL
MOSFET N-CH 400V 8A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R4008ANDTL is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vds) of 400V and a continuous drain current (Id) of 8A at 25°C. With a maximum on-resistance (Rds On) of 950mOhm at 4A and 10V gate-source voltage (Vgs), it offers efficient power switching. The MOSFET is specified with a gate charge (Qg) of 15nC maximum at 10V and an input capacitance (Ciss) of 500pF maximum at 25V. It supports a gate-source voltage range of ±30V and a threshold voltage (Vgs(th)) of 4.5V maximum at 1mA. The R4008ANDTL is packaged in a TO-252-3, DPAK (SC-63) surface mount configuration, supplied on tape and reel. It has a maximum power dissipation of 20W at 25°C (case temperature) and an operating junction temperature of 150°C. This component is utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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