ES6U42T2R
MOSFET P-CH 20V 1A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor ES6U42T2R, a P-Channel MOSFET, offers a 20V drain-source voltage and 1A continuous drain current. This device features a low on-resistance of 390mOhm at 1A and 4.5V Vgs, with drive voltages specified at 2.5V and 4.5V for optimal Rds(on). The ES6U42T2R includes an integrated Schottky diode, enhancing its switching performance. With a maximum power dissipation of 700mW (Ta) and an operating temperature up to 150°C (TJ), it is suitable for demanding applications. The component is supplied in a 6-WEMT package, tape and reel, and is designed for surface mounting. Key parameters include a gate charge of 2.1nC at 4.5V and input capacitance of 150pF at 10V. This MOSFET is commonly utilized in power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 1A, 4.5V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
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