ES6U41T2R
MOSFET N-CH 30V 1.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor ES6U41T2R is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 1.5A at 25°C. With a maximum On-Resistance (Rds On) of 240mOhm at 1.5A and 4.5V Vgs, it offers low conduction losses. The device includes an integrated Schottky diode for enhanced protection. Key parameters include a Gate Charge (Qg) of 2.2 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 80 pF at 10V Vds. The ES6U41T2R is housed in a compact 6-WEMT surface mount package and operates at a maximum junction temperature of 150°C. It is supplied in tape and reel packaging, suitable for automated assembly in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 10 V |
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