ES6U3T2CR
MOSFET N-CH 30V 1.4A WEMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor ES6U3T2CR is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This device features a continuous drain current (Id) of 1.4A at 25°C and a maximum power dissipation of 800mW (Ta). The Rds On is specified at a maximum of 240mOhm at 1.4A and 10V Vgs. It includes an integrated Schottky diode for protection. The ES6U3T2CR is housed in a 6-WEMT package for surface mounting and operates at temperatures up to 150°C (TJ). Key parameters include a Gate Charge (Qg) of 1.4 nC at 5V Vgs and an Input Capacitance (Ciss) of 70 pF at 10V Vds. This MOSFET is suitable for applications requiring efficient switching and power management in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1.4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 10 V |
Request a Quote
Clients Also Buy
SCT4013DRC15
750V, 13M, 4-PIN THD, TRENCH-STR
R6530KNXC7G
650V 30A TO-220FM, HIGH-SPEED SW
R5009ANX
MOSFET N-CH 500V 9A TO220
