ES6U2T2R
MOSFET N-CH 20V 1.5A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor ES6U2T2R is a N-Channel MOSFET designed for high-density power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.5A at 25°C. The Rds On is specified at a maximum of 180mOhm at 1.5A, 4.5V. Key electrical characteristics include a Gate Charge (Qg) of 1.8 nC at 4.5V and an Input Capacitance (Ciss) of 110 pF at 10V. The ES6U2T2R incorporates an isolated Schottky diode and operates with drive voltages between 1.5V and 4.5V, with a maximum Vgs of ±10V. The device is rated for a maximum junction temperature of 150°C and a power dissipation of 700mW. It is supplied in a 6-WEMT surface mount package, delivered on tape and reel. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 10 V |
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