ES6U1T2R
MOSFET P-CH 12V 1.3A 6WEMTManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, ES6U1T2R. This 12V device features a continuous drain current capability of 1.3A (Ta) and a maximum power dissipation of 700mW (Ta). Optimized for surface mounting, it is housed in a 6-WEMT package. Key electrical characteristics include a maximum Rds(On) of 260mOhm at 1.3A and 4.5V, and a gate charge of 2.4 nC at 4.5V. Input capacitance (Ciss) is a maximum of 290 pF at 6V. The design incorporates an isolated Schottky diode. Operating temperature range is up to 150°C (TJ). This component finds application in portable electronics and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 1.3A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-WEMT |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 6 V |
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