BSM600C12P3G201
SICFET N-CH 1200V 600A MODULEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's BSM600C12P3G201 is an N-Channel SiCFET module designed for high-power applications. This chassis mount component boasts a Drain to Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 600 A at 25°C. With a maximum power dissipation of 2460 W (Tc) and an operating junction temperature of 175°C, it is engineered for demanding thermal environments. Key parameters include an input capacitance (Ciss) of 28000 pF at 10 V and a gate-source threshold voltage (Vgs(th)) of 5.6 V at 182 mA. The module supports gate-source voltages up to +22V and down to -4V. This device is suitable for use in power conversion, electric vehicles, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 2460W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 182mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28000 pF @ 10 V |
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