BSM400C12P3G202
SICFET N-CH 1200V 400A MODULEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor BSM400C12P3G202 is a high-performance N-Channel SiCFET module designed for demanding power applications. This chassis mount component features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 400 A at 25°C (Tc), with a maximum power dissipation of 1570 W (Tc). The SiCFET technology enables operation up to 175°C (TJ). Key electrical characteristics include a typical input capacitance (Ciss) of 17000 pF at 10 V and a gate-source threshold voltage (Vgs(th)) of 5.6 V at 106.8 mA. The module supports gate-source voltage limits of +22 V and -4 V. This component is suitable for use in the electric vehicle, industrial power supply, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 1570W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 106.8mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17000 pF @ 10 V |
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