BSM180C12P3C202
SICFET N-CH 1200V 180A MODULEManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 880W (Tc) |
| Vgs(th) (Max) @ Id | 5.6V @ 50mA |
| Supplier Device Package | Module |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | +22V, -4V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 10 V |
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