2SK3050TL
MOSFET N-CH 600V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's N-Channel MOSFET, part number 2SK3050TL, offers a 600V drain-source voltage and a continuous drain current of 2A at 25°C (Ta). This surface mount component, packaged in a TO-252-3 (DPAK) configuration, features a maximum on-resistance of 5.5 Ohms at 1A and 10V Vgs. Key parameters include a gate charge of 25.6 nC (max) at 10V and an input capacitance of 280 pF (max) at 10V. With a maximum power dissipation of 20W (Tc) and an operating temperature up to 150°C (TJ), the 2SK3050TL is suitable for applications in power supply, lighting, and industrial control systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 10 V |
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