2SK2887TL
MOSFET N-CH 200V 3A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor presents the 2SK2887TL, an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 3A at 25°C. The Rds(on) is specified at a maximum of 900mOhm at 1.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 8.5 nC maximum at 10V and an input capacitance (Ciss) of 230 pF maximum at 10V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, also known as CPT3, and is supplied on tape and reel. With a maximum power dissipation of 20W (Tc) and an operating junction temperature of 150°C, this component is suitable for use in power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
QS6U22TR
MOSFET P-CH 20V 1.5A TSMT6
R6020YNXC7G
600V 12A TO-220FM, FAST SWITCHIN
