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2SK2740

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2SK2740

MOSFET N-CH 600V 7A TO220FN

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's 2SK2740 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 7 A at 25°C. The ON-resistance (Rds On) is specified at a maximum of 1.2 Ohm at 4 A, 10 V. With a maximum power dissipation of 30 W (Tc), it is suitable for demanding power conversion and switching tasks. The component is housed in a TO-220FN (TO-220-3 Full Pack) through-hole package. Key parameters include a gate-source voltage (Vgs) tolerance of ±30 V and a threshold voltage (Vgs(th)) of 4 V at 1 mA. Input capacitance (Ciss) is rated at 1050 pF at 10 V. This MOSFET is commonly utilized in power supply units, lighting control, and industrial motor drives.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 4A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220FN
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds1050 pF @ 10 V

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