2SK2504TL
MOSFET N-CH 100V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's 2SK2504TL is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage of 100V and a continuous drain current capability of 5A at 25°C (Ta), with a maximum power dissipation of 20W (Tc). The on-resistance (Rds On) is specified at 220mOhm maximum at 2.5A and 10V Vgs. The MOSFET utilizes a CPT3 package, a surface mount TO-252-3 (DPAK) configuration, suitable for automated assembly. It supports gate drive voltages from 4V to 10V for optimal Rds On performance and has a maximum gate-source voltage rating of ±20V. Typical applications include power supplies, motor control, and general-purpose switching in industrial and automotive sectors. The input capacitance (Ciss) is 520pF maximum at 10V. Operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
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