2SK2503TL
MOSFET N-CH 60V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's 2SK2503TL is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 5A at 25°C. With a low on-resistance of 135mOhm maximum at 2.5A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 1mA. Input capacitance (Ciss) is specified at 520 pF maximum at 10V Vds. The 2SK2503TL is housed in a TO-252-3, DPAK package, suitable for surface mounting. It supports a maximum power dissipation of 20W at 25°C case temperature and operates up to 150°C junction temperature. This component is commonly utilized in power management solutions, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
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