2SK2299N
MOSFET N-CH 450V 7A TO220FNManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor 2SK2299N is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 450V and a continuous drain current (Id) of 7A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 1.1 Ohm at 4A and 10V Vgs. With a maximum power dissipation of 30W (Tc), it is suitable for demanding power conversion and control circuits across various industrial sectors, including power supplies and lighting applications. The TO-220FN package facilitates through-hole mounting. Key specifications include an input capacitance (Ciss) of 870 pF at 10V and a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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