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2SK2103T100

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2SK2103T100

MOSFET N-CH 30V 2A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor N-Channel Power MOSFET (2SK2103T100) offers a 30 V drain-source voltage and a continuous drain current of 2A at 25°C. This device features a low on-resistance of 400mOhm maximum at 1A, 10V, with drive voltages ranging from 4V to 10V. The 2SK2103T100 is housed in a surface mount MPT3 package (TO-243AA) and dissipates a maximum of 500mW at 25°C. Its input capacitance (Ciss) is specified at 230 pF maximum at 10V. This MOSFET is suitable for applications requiring efficient switching and power control, commonly found in consumer electronics and industrial automation. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs400mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageMPT3
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V

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