2SK2103T100
MOSFET N-CH 30V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Power MOSFET (2SK2103T100) offers a 30 V drain-source voltage and a continuous drain current of 2A at 25°C. This device features a low on-resistance of 400mOhm maximum at 1A, 10V, with drive voltages ranging from 4V to 10V. The 2SK2103T100 is housed in a surface mount MPT3 package (TO-243AA) and dissipates a maximum of 500mW at 25°C. Its input capacitance (Ciss) is specified at 230 pF maximum at 10V. This MOSFET is suitable for applications requiring efficient switching and power control, commonly found in consumer electronics and industrial automation. The maximum gate-source voltage is ±20V, with a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
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