2SK2095N
MOSFET N-CH 60V 10A TO220FNManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's 2SK2095N is an N-Channel power MOSFET designed for general-purpose switching applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 10A at 25°C ambient temperature. The low on-resistance of 95mOhm is achieved at 5A drain current and 10V gate-source voltage. Its TO-220FN package facilitates through-hole mounting and offers a maximum power dissipation of 30W at 25°C case temperature. Key electrical parameters include an input capacitance of 1600pF at 10V Vds and a gate threshold voltage of 2.5V at 1mA. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in power supply units, voltage regulators, and motor control circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V |
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