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2SK2095N

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2SK2095N

MOSFET N-CH 60V 10A TO220FN

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's 2SK2095N is an N-Channel power MOSFET designed for general-purpose switching applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 10A at 25°C ambient temperature. The low on-resistance of 95mOhm is achieved at 5A drain current and 10V gate-source voltage. Its TO-220FN package facilitates through-hole mounting and offers a maximum power dissipation of 30W at 25°C case temperature. Key electrical parameters include an input capacitance of 1600pF at 10V Vds and a gate threshold voltage of 2.5V at 1mA. The operating temperature range extends to 150°C (TJ). This component is commonly utilized in power supply units, voltage regulators, and motor control circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageTO-220FN
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 10 V

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