SCS320AHGC9
DIODE SIL CARB 650V 20A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor SCS320AHGC9 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220ACP (TO-220-2) case, offers a maximum DC reverse voltage of 650 V and an average rectified forward current (Io) of 20 A. It exhibits a low reverse leakage current of 100 µA at 650 V and features zero reverse recovery time (trr) for currents greater than 500 mA (Io), indicating superior switching performance. The SCS320AHGC9 operates at a maximum junction temperature of 175°C and has a typical capacitance of 1000 pF at 1 V and 1 MHz. This device is suitable for use in power conversion systems, electric vehicle charging, industrial power supplies, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1000pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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