SCS315AHGC9
DIODE SIL CARB 650V 15A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS315AHGC9 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220ACP, offers a maximum DC reverse voltage of 650V and an average rectified current handling capability of 15A. Featuring a low junction capacitance of 750pF at 1V, 1MHz, and a reverse leakage current of 75 µA at 650V, it demonstrates excellent efficiency. The SCS315AHGC9 boasts an impressive maximum operating junction temperature of 175°C. Its SiC Schottky technology provides a zero reverse recovery time when conducting over 500mA, making it suitable for power factor correction, switch mode power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 750pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
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