SCS312AMC
DIODE SIL CARB 650V 12A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS312AMC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220FM package, offers a maximum DC reverse voltage of 650 V and a forward voltage of 1.5 V at 12 A. Its average rectified forward current (Io) is rated at 12 A, with a low reverse leakage current of 60 µA at 650 V. A key characteristic is its zero reverse recovery time, indicating superior switching performance for efficient power conversion. The SCS312AMC operates efficiently across a wide temperature range, with a maximum junction operating temperature of 175°C. This device finds application in power supply units, electric vehicle charging, and industrial motor drives where high efficiency and reliability are paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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