SCS312AHGC9
DIODE SIL CARB 650V 12A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor SCS312AHGC9 is a 650V, 12A Silicon Carbide (SiC) Schottky diode. This high-performance component features a low forward voltage drop and exceptionally fast switching speeds, characterized by a reverse recovery time of 0 ns, indicating no significant recovery charge beyond 500mA. With a maximum junction operating temperature of 175°C, it is designed for demanding power electronics applications. The device exhibits a reverse leakage current of 60 µA at its maximum reverse voltage of 650 V and a capacitance of 600 pF at 1V and 1MHz. Packaged in a TO-220ACP (TO-220-2) through-hole configuration, the Rohm Semiconductor SCS312AHGC9 is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
Request a Quote
Clients Also Buy
1SS244T-77
DIODE GEN PURP 220V 200MA MSD
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
