SCS310AHGC9
DIODE SIL CARB 650V 10A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS310AHGC9 is a Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220ACP (TO-220-2) package, offers a maximum DC reverse voltage of 650V and an average rectified current handling capability of 10A. It features a low forward voltage drop of 1.5V at 10A and a reverse leakage current of 50 µA at 650V. The SCS310AHGC9 exhibits a zero reverse recovery time (trr) for currents exceeding 500mA, a characteristic of its advanced SiC Schottky technology. This diode operates at a maximum junction temperature of 175°C and has a typical capacitance of 500pF at 1V and 1MHz. Its robust performance makes it suitable for power factor correction, power supply, and electric vehicle charging applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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