SCS308APC9
DIODE SILICON CARBIDE 650V 8AManufacturer: Rohm Semiconductor
Categories: Single Diodes
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This Rohm Semiconductor diode, part number SCS308APC9, is a 650V, 8A Silicon Carbide (SiC) Schottky device. Featuring a TO-220-2 package for through-hole mounting, this component offers a low forward voltage of 1.5V at 8A and a minimal reverse leakage of 40 µA at 650V. Its key characteristic is the absence of reverse recovery time, contributing to high-efficiency operation. The device has a maximum junction operating temperature of 175°C and a capacitance of 400pF at 1V and 1MHz. This SiC Schottky diode is suitable for demanding applications in power conversion, automotive electronics, and industrial power supplies where high voltage, high current, and low switching losses are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 400pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
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