SCS308AMC
DIODE SIL CARB 650V 8A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS308AMC is a 650V, 8A Silicon Carbide (SiC) Schottky diode. This through-hole component in a TO-220FM package offers a maximum forward voltage drop of 1.5V at 8A. Featuring zero reverse recovery time (trr), it is designed for high-efficiency power applications. The SCS308AMC exhibits a reverse leakage current of 40 µA at its maximum reverse voltage of 650V and a capacitance of 400pF at 1V and 1MHz. Its maximum operating junction temperature is 175°C. This device is suitable for use in power factor correction, switch-mode power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 400pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
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