SCS306AMC
DIODE SIL CARB 650V 6A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SiC Schottky Diode, part number SCS306AMC. This silicon carbide device offers a 650 V reverse voltage and a 6 A average rectified forward current. Featuring a low forward voltage drop of 1.5 V (Max) at 6 A and a minimal reverse leakage current of 30 µA at 650 V. The SCS306AMC boasts a zero reverse recovery time, indicating superior switching performance. Its TO-220FM package is suitable for through-hole mounting, and it operates efficiently up to a maximum junction temperature of 175°C. This component is commonly employed in power supply units, motor drives, and industrial power conversion applications where high efficiency and robust performance are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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