SCS306AHGC9
DIODE SIL CARB 650V 6A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS306AHGC9 is a 650V, 6A Silicon Carbide (SiC) Schottky diode. This component is housed in a TO-220ACP package with a through-hole mounting type. It features a forward voltage drop of 1.5V at 6A and a reverse leakage current of 30 µA at 650V. The SCS306AHGC9 boasts a maximum junction operating temperature of 175°C and exhibits zero reverse recovery time for currents over 500mA, characteristic of SiC Schottky technology. This diode is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
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