SCS304APC9
DIODE SILICON CARBIDE 650V 4AManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS304APC9 is a 650V, 4A Silicon Carbide Schottky diode. This through-hole component, packaged in a TO-220-2, features a maximum forward voltage of 1.5V at 4A and a reverse leakage current of 20 µA at 650V. Its junction operating temperature reaches a maximum of 175°C. Notably, this SiC Schottky diode exhibits zero reverse recovery time above 500mA, a critical characteristic for high-frequency power switching applications. The SCS304APC9 is utilized in power supplies, electric vehicle charging, and industrial motor control systems where high efficiency and reduced switching losses are paramount. Capacitance is rated at 200pF at 1V and 1MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 200pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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