SCS304AMC
DIODE SIL CARB 650V 4A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor presents the SCS304AMC, a Silicon Carbide (SiC) Schottky diode. This component offers a 650 V reverse voltage and a 4 A average rectified current. Its forward voltage drop is a maximum of 1.5 V at 4 A, with minimal reverse leakage of 20 µA at 650 V. The SCS304AMC features a zero reverse recovery time, indicating exceptional switching performance. Operating at a maximum junction temperature of 175°C, this diode is housed in a TO-220FM package suitable for through-hole mounting. Its capacitance is rated at 200 pF at 1V and 1MHz. This SiC diode is a robust solution for applications in power factor correction, server power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 200pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
Request a Quote
Clients Also Buy
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
RBQ3RSM65BTFTL1
DIODE SCHOTTKY 65V 3A TO277A
