SCS304AHGC9
DIODE SIL CARB 650V 4A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor SCS304AHGC9 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220ACP (TO-220-2) package, offers a maximum DC reverse voltage of 650V and an average rectified forward current handling capability of 4A. Its forward voltage drop (Vf) is a maximum of 1.5V at 4A. Notably, this device exhibits no reverse recovery time (trr) for currents above 500mA, a characteristic of SiC Schottky technology that significantly reduces switching losses. The operating junction temperature can reach up to 175°C (Max). With a reverse leakage current of 20 µA at 650V and a capacitance of 200pF at 1V, the SCS304AHGC9 is suitable for power supply units, motor drives, and renewable energy systems where efficiency and high-temperature operation are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 200pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 4 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
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