SCS302AHGC9
DIODE SIC 650V 2.15A TO220ACPManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor SCS302AHGC9 is a Silicon Carbide (SiC) Schottky diode. This component features a maximum reverse voltage (Vr) of 650V and an average rectified forward current (Io) of 2.15A. The forward voltage drop (Vf) is a maximum of 1.5V at 2A, and the reverse leakage current at 650V is 10.8 µA. Engineered with a 0 ns reverse recovery time, the SCS302AHGC9 offers superior switching performance. Its junction operating temperature can reach up to 175°C (Max). The diode is housed in a TO-220ACP package, designed for through-hole mounting. This device is suitable for applications in power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 110pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2.15A |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 2 A |
| Current - Reverse Leakage @ Vr | 10.8 µA @ 650 V |
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