SCS220KGC
DIODE SIL CARB 1.2KV 20A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS220KGC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220AC package, offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 20 A. The forward voltage drop at 20 A is specified at a maximum of 1.6 V. Featuring a junction operating temperature up to 175°C, the SCS220KGC exhibits a reverse leakage current of 400 µA at 1200 V. Its advanced SiC technology provides zero reverse recovery time above 500mA, making it suitable for power conversion systems in industrial, automotive, and renewable energy sectors. The device's capacitance at 1V and 1MHz is 1060pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1060pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
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