SCS220AEC
DIODE SIL CARBIDE 650V 20A TO247Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS220AEC is a 650V, 20A Silicon Carbide (SiC) Schottky diode. This through-hole component features a TO-247-3 package, designed for robust power applications requiring high efficiency and reliability. Its low forward voltage of 1.55V at 20A, coupled with zero reverse recovery time for currents above 500mA, makes it suitable for demanding switching applications. The device exhibits a typical capacitance of 730pF at 1V and 1MHz, and a reverse leakage of 400 µA at 600V. Operating junction temperature reaches a maximum of 175°C. The SCS220AEC is utilized in power factor correction, electric vehicle power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 20 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 600 V |
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