SCS215KGC
DIODE SIL CARB 1.2KV 15A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor's SCS215KGC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220AC package, offers a maximum reverse voltage (Vr) of 1200 V and a continuous average rectified current (Io) of 15 A. The SCS215KGC features a low forward voltage (Vf) of 1.6 V at 15 A and exhibits zero reverse recovery time (trr) exceeding 500mA (Io), a characteristic of SiC Schottky technology. Its low junction capacitance of 790pF @ 1V, 1MHz contributes to efficient switching. The diode operates at a maximum junction temperature of 175°C. This component is suitable for use in power supply, motor drive, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 790pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 15 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 1200 V |