SCS215AMC
DIODE SIL CARB 650V 12A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS215AMC is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power applications. This component features a 650 V reverse voltage rating and a maximum forward current of 12 A, with a typical forward voltage drop of 1.55 V at 12 A. The SCS215AMC exhibits a low reverse leakage current of 240 µA at 600 V and boasts a zero reverse recovery time, indicating superior switching performance. Its SiC Schottky technology enables operation at higher temperatures, with a maximum junction operating temperature of 175°C. The diode is housed in a TO-220FM package for through-hole mounting. Applications for this component include power supplies, motor drives, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 438pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 600 V |
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