SCS215AGHRC
DIODE SIL CARB 650V 15A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor SCS215AGHRC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220AC package, offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 15 A. It features a forward voltage drop of 1.55 V at 15 A and a remarkably low reverse leakage current of 300 µA at 600 V. The SCS215AGHRC exhibits a capacitance of 550 pF at 1V and 1MHz. Key performance characteristics include a junction operating temperature up to 175°C (Max) and a reverse recovery time of 0 ns, indicating no significant switching losses. This device is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 550pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 15 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 600 V |
| Qualification | AEC-Q101 |
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