SCS215AEC
DIODE SIL CARBIDE 650V 15A TO247Manufacturer: Rohm Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Rohm Semiconductor SCS215AEC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650 V and a forward voltage drop of 1.55 V at 15 A. Its average rectified forward current handling capability is 15 A. The SCS215AEC features a low reverse leakage current of 300 µA at 600 V and exhibits no significant reverse recovery time, contributing to improved efficiency in switching applications. With an operating junction temperature up to 175°C (Max), this device is suitable for demanding power conversion systems. The SCS215AEC finds application in power supplies, motor drives, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 550pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 15 A |
| Current - Reverse Leakage @ Vr | 300 µA @ 600 V |
Request a Quote
Clients Also Buy
1SS244T-77
DIODE GEN PURP 220V 200MA MSD
RBQ3RSM10BTL1
DIODE SCHOTTKY 100V 3A TO277A
RFV8TJ6SGC9
DIODE GEN PURP 600V 8A TO220ACFP
