SCS212AMC
DIODE SIL CARB 650V 12A TO220FMManufacturer: Rohm Semiconductor
Categories: Single Diodes
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The Rohm Semiconductor SCS212AMC is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. Featuring a 650V reverse voltage rating and a maximum forward current of 12A, this component offers a low forward voltage drop of 1.55V at 12A and a negligible reverse recovery time (0 ns). Its robust construction, evident in the TO-220FM package, supports a maximum junction operating temperature of 175°C. This diode is suitable for use in power supplies, motor control, and renewable energy systems, providing excellent performance and reliability in demanding environments. The capacitance @ Vr, F is specified at 438pF @ 1V, 1MHz, and the reverse leakage current is 240 µA @ 600 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 438pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220FM |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 600 V |
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