SCS212AGHRC
DIODE SIL CARB 650V 12A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS212AGHRC is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, packaged in a TO-220AC (TO-220-2) case, offers a maximum DC reverse voltage of 650 V and an average rectified forward current of 12 A. It features a low forward voltage drop of 1.55 V at 12 A and a minimal reverse leakage current of 240 µA at 600 V. The SCS212AGHRC boasts a superior operating junction temperature of 175°C (Max) and is qualified to AEC-Q101 standards, making it suitable for demanding automotive and industrial power conversion systems. Its SiC technology ensures zero reverse recovery time (trr) above 500mA, contributing to increased efficiency and reduced switching losses. The diode exhibits a capacitance of 438pF at 1V and 1MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 438pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 600 V |
| Qualification | AEC-Q101 |
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