SCS212AGC
DIODE SIL CARB 650V 12A TO220ACManufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS212AGC is a Silicon Carbide (SiC) Schottky diode with a 650V reverse voltage rating and a 12A average rectified current capability. This through-hole component, packaged in a TO-220AC, features a low forward voltage drop of 1.55V at 12A and a leakage current of 240 µA at 600V. The SCS212AGC exhibits zero reverse recovery time, enabling high-speed switching performance critical for applications such as power factor correction (PFC), inverters, and DC-DC converters in electric vehicles, industrial power supplies, and renewable energy systems. Its maximum operating junction temperature is 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 438pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 600 V |
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