SCS210KE2C
DIODE SIL CARB 1.2KV 10A TO247Manufacturer: Rohm Semiconductor
Categories: Single Diodes
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Rohm Semiconductor SCS210KE2C Silicon Carbide (SiC) Schottky Diode. This component features a 1200 V reverse voltage rating and a 10 A average rectified current capability. Engineered with SiC technology, it offers exceptional performance characteristics, including a maximum operating junction temperature of 175°C and a fast switching speed with no measurable reverse recovery time above 500mA. The SCS210KE2C is housed in a TO-247-3 package, suitable for through-hole mounting. Its robust design makes it ideal for demanding applications in power factor correction, inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |